Enhanced serial RRAM cell for unpredictable bit generation
نویسندگان
چکیده
In this letter, the serial configuration of two RRAMs is used as a basic cell to generate an unpredictable bit. The basis operation considers starting from Low Resistive State (LRS) in both devices (initialization step), then, one them switched High (HRS) (bit generation step) without knowing, advance, which switching device (unmasking step). proposal, larger resistance variability HRS compared LRS considered improve masking performance (masking presented experimental results are proof-of-concept applicability proposal.
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ژورنال
عنوان ژورنال: Solid-state Electronics
سال: 2021
ISSN: ['0038-1101', '1879-2405']
DOI: https://doi.org/10.1016/j.sse.2021.108059